"̨¶À"·Ö×ÓÊÜ·Ã˵"¼ÓÈëÖйú"±»Ö±²¥,ÍøÓÑ:²»Ð¡ÐÄ˵ÁË..."/> µÚËĽڻ¹Ê£6·Ö¶àÖÓʱ£¬±±¾©¶Ó·ÀÊØÀֳɣ¬³¤´«µÐÊÖÀºÏ£¬»¹Ã»»Ø·ÀµÄ·¶×ÓÃú1´ò0µ¥ÌôÀº¿ð£¬Ð§¹ûȴТ˳ÁËÊ×ÂÖµÚÒ»¸öÃûÊ±ÊÆ¡ª¡ª±»Àº¿ð¸Çñ¡£"/>

ÌÚ²©tengbo9885¹ÙÍø

ÌÚ²©tengbo9885_Ê×Ò³(»¶Ó­Äú)

"̨¶À"·Ö×ÓÊÜ·Ã˵"¼ÓÈëÖйú"±»Ö±²¥,ÍøÓÑ:²»Ð¡ÐÄ˵ÁË...

¡¶"̨¶À"·Ö×ÓÊÜ·Ã˵"¼ÓÈëÖйú"±»Ö±²¥,ÍøÓÑ:²»Ð¡ÐÄ˵ÁË...¡·¾çÇé¼ò½é£ºµÚËĽڻ¹Ê£6·Ö¶àÖÓʱ±±¾©¶Ó·ÀÊØÀֳɳ¤´«µÐÊÖÀºÏ»¹Ã»»Ø·ÀµÄ·¶×ÓÃú1´ò0µ¥ÌôÀº¿ðЧ¹ûȴТ˳ÁËÊ×ÂÖµÚÒ»¸öÃûÊ±ÊÆ¡ª¡ª±»Àº¿ð¸ÇñÕâÒ»´ÎÌú¼ÒÅÉDzËûÀ´Ö÷³ÖÕâÀïµÄÊ±ÊÆΪÌú¼ÒÕùÈ¡ÕâÆ¬ÑÌÂÞůÓñÌïÒò´ËÌúÃæÉñ±ã½«ÌúÈôÄÐÒ²´øÀ´½èÖúÕâ´Î»ú»á¶ÔËýÄ¥íÂ"̨¶À"·Ö×ÓÊÜ·Ã˵"¼ÓÈëÖйú"±»Ö±²¥,ÍøÓÑ:²»Ð¡ÐÄ˵ÁË...

¡¶"̨¶À"·Ö×ÓÊÜ·Ã˵"¼ÓÈëÖйú"±»Ö±²¥,ÍøÓÑ:²»Ð¡ÐÄ˵ÁË...¡·ÊÓÆµËµÃ÷£ºÕÅСǿÍû׏òÔÚµØÉϵÄËï¿É¸»ÉìÊÖ³é³öÑü¼äµÄNP22Ãé×¼Ëï¿É¸»µÄ¶îÍ·Õâ´ÎËû×¼±¸ÏÈɱÁËËï¿É¸»³öÒ»³öÐÄÍ·¶ñÆøÆäËûµÄËû¹Ü²»ÁËÄÇô¶àËùνµÍ¼ÛÍŹËÃû˼Òå¾ÍÊÇÒÔ¼«µÍµÄ¼ÛÇ®ÎüÒýÓοͲÎÍÅæÒÏ·ͨ³£ÇéÐÎϵͼÛÍŵÄÓοÍÈËÊýÖڶྰµãÍ£Áôʱ¼ä¶Ì¹ºÎïµãʱ¼ä³¤µ¼Óκ;°ÇøÊÂÇéÖ°Ô±ÍùÍùͨ¹ýÇ¿ÖÆÏûºÄµÈÊֶλñÈ¡»Ø¿ÛÓÎ¿ÍµÄæÒÏ·ÌåÑéºÍÈ¨Òæ¶¼ÎÞ·¨»ñµÃÓÐÓðü¹Ü10ÔÂ1ÈÕ2024Ê×½ì½ð»ªËÎÔÏ¿§·ÈÎÄ»¯¼ÎÄ껪ÔÚ½ð»ªæÄÖݹųÇÈÈÄÖ¾ÙÐÐÎüÒý²»ÉÙÊÐÃñÓοÍǰÀ´æÒÏ·ÌåÑéÀÖÏí¹úÇì¼ÙÆÚ

ÖÐÓ¢»¥ÒëµçÁ¦µç×ÓÁìÓòÊõÓï-רÁªÒëÃËÍø£¨1£©2020-07-09 22:57¡¤×¨ÁªÒëÃËÍøÐ¡ÒëרÁªÒëÃËÍø-רҵÔÚÏß·­ÒëÍø1/f ÔëÉù 1/f noise100 ¼¶Çå½àÇéÐÎ class 100 clean environment100 ¼¶Çå½àÊÒ class 100 clean room110 ƫת½Ç²ÊÉ«ÏÔÏó¹Ü color picture tube of 11016 λ΢ÐÍÅÌËã»ú 16 bit microcomputer1 Êä³ö one output1 ÐźŠone signal1 ״̬ one state4 λƬ´¦Öóͷ£»ú 4 bit slice processor5 ·ü»ù×¼µçѹԴ 5 referenceab Àà·Å´óÆ÷¼×ÒÒÀà·Å´óÆ÷ class ab amplifierab ÀàÔËÓà class ab operationac ½Ø¸îË®¾§Æ¬ ac cut quartzat ÇиÌå at cut crystala Àà·Å´óÆ÷ class a amplifiera ÀàÔËÓà class a operationb y µÆÆ÷ blue color difference modulatorb y ÐźŠblue color difference signalbc ½Ø¸îʯӢƬ bc cut quartzbt ½Ø¸îË®¾§ bt cut quartzb Àà·Å´óÆ÷ class b amplifierb ÀàÔËÓà class b operationcml Ãŵç· cml gatecmos ¹¤ÒÕ cmos processcmos ¼¯³Éµç· cmos integrated circuitcmos ¼¯³Éµç· cmosiccmos ½á¹¹ cmoscmos ½á¹¹ complementary moscmos ½á¹¹µÄ±ÕËø cmos latchupcrt Ó«¹âÆÁ crt face platec ÀàÔËÓà class c operationdmnos ½á¹¹ dmnos structuredmos ³¡Ð§Ó¦¾§Ìå¹Ü dmosfetdmos ³¡Ð§Ó¦¾§Ìå¹Ü double diffused mos fetdmos ½á¹¹ dmosdmos ½á¹¹ double diffused metal oxide semiconductordt ÇиîË®¾§ dt cut quarzd Àà·Å´óÆ÷ class d amplifierf ÐÍÏÔʾÆ÷ f scopef ÐÍÏÔʾÆ÷ fdisplyg µ¼º½ÏµÍ³ gee systemh À×´ïϵͳ h radar systemh Ãæ t ÐÍÌÖÂÛ h plane t junctionh Æ½ÃæÍäÍ· h bendh Æ½ÃæÍäÍ· h plane bendil ´æ´¢Æ÷ il memoryil µç· il circuitil ÃÅ il gateil λƬ΢´¦Öóͷ£»ú il slice microprocessorl ÐÍÒõ¼« l cathodelsi µÆ½âµ÷ lsi modemlsi ¹¤ÒÕ lsi technologylsi Âß¼­ lsi logiclsi оƬ lsi chipl ÐÎÌìÏß l aeriall ÐÎÌìÏß l antennam Ð͵ç×Ó¹Ü m type tubem ÐÍ·µ²¨Õñµ´¹Ü m type backward wave tubem ÐÍÐв¨¹Ü m type twtmis ³¡Ð§Ó¦¾§Ìå¹Ü metal insulator semiconductor fetmis ³¡Ð§Ó¦¾§Ìå¹Ü misfetmis ¾§Ìå¹Ü mis transistormnos ½á¹¹ metal nitride oxide semiconductor structuremnos ½á¹¹ mnos structuremos µçÈÝÆ÷ mos capacitormos ¸ºÔؾ§Ìå¹Ü metal oxide semiconductor transistor loadmos ¹¤ÒÕ mos technologymos ½á¹¹±¡Æ¬ mos wafermos ½á¹¹Àë×Ó×¢Èë mos ion implantationmos ½á¹¹Ä¸Æ¬ÒªÁì master mos approachmos ¾§Ìå¹Ü mos transistormos ¾§Ìå¹Ü mostmos ¾§Ìå¹Üµç· mos transistor circuitmos ¾§Ìå¹ÜÂß¼­ mos transistor logicmos ¾§Ìå¹ÜÂß¼­ mostlmos Âß¼­ mos logicmos ÕóÁм¯³Éµç· mos array integrated circuitn p n ¾§Ìå¹Ü n p n transistorn p ½á n p junctionn ¹µµÀ³¡Ð§Ó¦¾§Ìå¹Ü n channel fetn ¹µµÀ³¡Ð§Ó¦¾§Ìå¹Ü nfetn ¹µµÀ½áÐͳ¡Ð§Ó¦¾§Ìå¹Ü n channel junction fetn ¹µµÀ½ðÊôÑõ»¯Îï°ëµ¼Ìå n channel mosn ¹µµÀ½ðÊôÑõ»¯Îï°ëµ¼Ìå nmosn Úå n welln Ú廥²¹½ðÊôÑõ»¯Îï°ëµ¼Ì幤ÒÕ n well cmos processn ÐͰ뵼Ìå n doped semiconductorn ÐͰ뵼Ìå n type semiconductorn ÐͰ뵼ÌåÇÖÊ´ËÙÂÊ n etch raten ÐͲôÔÓ n type dopingn ÐͲôÔӵĩ¼« n doped drainn ÐͲôÔÓµÄÔ´¼« n doped sourcen ÐͲôÔÓ¼ÁÔ­×Ó n type dopant atomn ÐÍ³Äµ× n type substraten Ð͵¼µç n type conductionn ÐÍÍâÑÓ²ã n epin ÐÍÔÓÖÊÔ´ n dopant sourcen+ ± £»¤»· n+ guard ringn+ À©É¢Çø n+ diffusionn+ ÐͶྦྷ¹èÕ¤ n+ poly gaten+ ÒþÂñ¼¯µç¼« n+ buried collectornmos ¹¤ÒÕ nmos technologynmos ¾§Ìå¹Ü nmos transistorntsc ÖÆ²ÊÉ«µçÊÓ ntsc color television systemo Ðͳ¬¸ßƵµç×Ó¹Ü o type tubeo ÐÍ·µ²¨¹Ü o type backward wave tubep i n ¶þ¼«¹ÜÒÆÏàÆ÷ p i n diode phase shifterp i n ¹âµç¶þ¼«¹Ü p i n photodiodep n ½á p n junctionp n ½á¸ôÀë p n junction isolationp n ½áÐÍÕûÁ÷ p n junction rectificationp n ½áÐ͵çºÉñîºÏÆþ jccdp n ½áÐ͵çºÉñîºÏÆþ junction ccdp ¹µµÀ³¡Ð§Ó¦¾§Ìå¹Ü p channel fetp ¹µµÀ³¡Ð§Ó¦¾§Ìå¹Ü pfetp ¹µµÀ½ðÊôÑõ»¯Îï°ëµ¼Ìå¾§Ìå¹Ü p channel metal oxide semiconductor transistorp ¹µµÀ½ðÊôÑõ»¯Îï°ëµ¼Ìå¾§Ìå¹Ü pmos transistorp ÚåÐγÉÀ©É¢ p well diffusionp ÚåÐγÉÑÚĤ p well maskp ÐͰ뵼Ìå p doped semiconductorp ÐͰ뵼Ìå p type semiconductorp ÐͲôÔÓ p type dopingp ÐͲôÔÓ¼Á p dopantp ÐͲôÔÓ¼Á p dopant modifierp ÐͲôÔÓ¼Á p type dopantp ÐͲôÔÓ©¼« p doped drainp ÐͲôÔÓÔ´¼« p doped sourcep Ð͵¼µçÐÔ p type conductionp Ð͹µµÀ½ðÊôÑõ»¯Îï°ëµ¼Ìå p channel mosp ÐͽӴ¥ p contactp ÐÍÀ©É¢ p type diffusionp ÐÍÀ©É¢Çø p diffused regionp ÐÍÍâÑÓ²ã p epip+ Ðͱ £»¤»· p+ guard ringpin ¶þ¼«¹Ü intrinsic barrier diodepin ¶þ¼«¹Ü p i n diodepin ¶þ¼«¹Ü pin diode

ÅԱߵÄÅÌËãµÄÈËÁ¢¸ø³öÁËЧ¹ûÃÕµ×ҲͬʱÏÔʾÔÚÁË´óÆÁÄ»ÉϵÚÒ»¼þëÁÏÀî¹âÔ¶¸ø¶¨µÄ¼ÛÇ®ÔÚÎó²î°Ù·ÖÖ®ÎåÖ®ÄÚ¿ÉÊǵڶþ¼þÁè¼ÝÁ˰ٷÖÖ®ÎåÎÒÂèØÊºóÓÖÅܵ½¼¸Î»Ç×ÆÝ¼ÒÄÖ˵ÎÒ²»Ð¢˵ÎÒÐĺÝ¿ÉÇׯÝÃÇÒ²²»ÊÇɵ×Ó·×·×ȰËý£ºÄãÕâÒ»±²×ÓÆ«ÐÄÆ«µÃÌ«¹ýÁ˹ֲ»µÃÈ˼Ҳ»¿ÏÒâ¹ÜÄã

±à¾ç£º
¸üУº

2025-09-26 17:16:14

±¸×¢£º
¹úÓï
ÆÀ¼Û£º
ÌÚ²©tengbo9885_Ê×Ò³(»¶Ó­Äú)
Ê×Ò³
Ó°Ï·
Ò»Á¬¾ç
×ÛÒÕ
¶¯Âþ
APP
ÍøÕ¾µØÍ¼